Dr. Abhay A. Sagade


Associate Professor (Research)

Welcome to the Laboratory for Advanced Nanoelectronic Devices at SRM Research Institute of Science and Technology. We are involved in materials innovation for enabling new device structures and concepts. We study a wide range of electronic materials at nanoscale to understand importance of confinment in all geometries.  Exotic schemes of manoeuvring, processing, and engineering materials at low-dimensions are explored for new functionalities and applications. The interdisciplinarity in working covers experimental semiconductor Physics, Electrical Engineering, Materials Science, and Chemistry. All these activities are aimed in innovative manufacturing technologies for large-area nano-electronics, where the device and ultimately system level performance is investigated.
Open positions:  We are currently looking for talented and motivated research scholars to join the group. For more details see 'opportunities'. Note, next round of admissions will be in April 2018.
*** Research News ***
- New publication: Engineering the photoresponse of InAs nanowires, is accepted in ACS Appl. Mater. Interfaces; the journal from American Chemical Society (ACS). December 2017.
- Research work on 'graphene-based encapsulation for OLED' is highlighted in scientific news : Nanowerk, ScienceVio, Graphene-Info, Awesome Display, Jiangsu liangcai electronics co. LTD.
- New publication: Graphene-based nanolaminates as ultra-high permeation barriers, is accepted in npj 2D Materials and Applications; the journal from Springer Nature. August 2017.

Research Interests

  • Synthesis of 2D materials by CVD; solution based growth of organic & inorganic nanowires, and metal chalcogenide films
  • Interface engineering for 3D device integration; atomic layer deposition; device encapsulations
  • Masked and mask-less lithographic processing
  • Electronic devices: FETs; Schottky diodes; physical sensors: photons, Hall, strain, temperature, gas flow; chemical sensors: ammonia, hydrogen, humidity; resistive switching memory
  • RF and bendable nanoelectronics

Research Summary

After completing two years of Postdoctoral tenure at University of Cambridge, UK, Dr. Sagade joined SRM Research Institute of Science and Technology. His research explores low-dimensional studies of novel electronic materials, components and device architectures. In particular, charge transport in electronic components such as field effect transistors, Schottky diodes, physical and chemical sensors and bendable devices. Various functional materials are deployed in these applications including graphene, organic & inorganic nanowires, and metal chalcogenide thin films. A number of research projects are aimed to work closely with industrial links and large network of collaborators.

Dr. Sagade has more than 40 peer-reviewed publications, 1 granted US patent and 2 US/world patents applications. He is a member of American Association of Advancement of Science (AAAS) USA, Indian Science Congress, and Materials Research Society Singapore. He is, also, a reviewer of several leading journals from ACS, IOP, Wiley, RSC, Elsevier, Springer, etc. publishers e.g. Advanced Functional Materials, 2D Materials, Nanotechnology, ACS Applied Materials and Interfaces, Nanoscale, Sensors and Actuators B, IEEE Transactions on Electronic Devices, etc.

Research achievements

  • Development of sub-10 nm thin and 50 cm2 large area graphene-AlOx based nanolaminates for ultra-high permeation barrier
  • Over 1.5 years air stable encapsulation of graphene devices with ALD oxide; Fabrication of graphene RF transistors on plastic substrate operating at 1 GHz cut-off frequency
  • Measurement of record high sensitive pT magnetic field detection with BN/G/BN heterostructure Hall sensor at room temperature in ambient
  • Selective supramolecular nanowire high hole mobility FET fabrication and measurements; Ultra-fast detection of breath humidity using supramolecular nanowires
  • Large area soft-lithography patterning of semitransparent and flexible Pd micro-ribbons for high sensitive strain gauge


Industrial interaction



  • AMO GmbH Aachen Germany: Development of encapsulation of graphene high-frequency devices on solid and flexible substrates; CVD graphene quality check for Graphenea, Spain

Principle Investigator: Dr. Abhay A. Sagade


  • Ph.D. (Physics) – Dr. Babasaheb Ambedkar Marathwada University, Aurangabad, Maharashtra, India, 2006-2009 (In association with IUAC, New Delhi, India)
  • M.Sc. (Physics) – Shivaji University, Kolhapur, Maharashtra, India. 2003-2005
  • B.Sc. (Physics) – Shivaji University, Kolhapur, Maharashtra, India. 2000-2003

        Professional Experience

  • Research Associate Professor – SRM Research Institute and Department of Physics, SRM Institute of Science and Technology (formerly known as SRM University), Chennai, India. From June 2017 to present
  • Postdoc – Department of Engineering, University of Cambridge, UK. From July 2015 to May 2017
  • Visiting Consultant – Thematic Unit of Excellence in Nano-Chemistry, JNCASR, Bangalore, India. From April 2015 to July 2015
  • R&D Scientist, AMO GmbH, Aachen, Germany. From August 2012 to January 2015
  • Postdoc – Chemistry & Physics of Materials Unit, JNCASR, Bangalore, India. From May 2009 to July 2012


  • Outstanding Reviewer Award for 'Ceramics International' the journal from Elsevier, July 2017.
  • EPSRC Internship Fellowship to work at FlexEnable, UK. 2017
  • Best poster presentation award at ICONSAT-2012 (Jan.), Mumbai, India
  • Best poster presentation award at ICMAT- MRS -2011 (June), Singapore
  • Best poster presentation award at 52nd DAE-SSPS-2007 (Dec.), Mysore, India
  • DST-NANO postdoc fellowship, India 2010 (Jan.)
  • CSIR-SRF award, India 2008 (Oct.)
  • JRF and SRF from ministry of defence DRDO, India 2005 (May)
  • Annual scholarship during UG from D. R. B. M., Mumbai, India (2001-2003)


Important websites in nanoelectronics:

International Technology Roadmap for Semiconductors,  Graphene Flagship FET, MIT Technology Review, Centre for Nano Science and Engineering (CeNSE) at IISc, India, National Centre for Flexible Electronics at IIT Kanpur, India, National Graphene Institute (NGI) at Manchester, UK, Centre for Advanced 2D Materials and Graphene Research Centre at NUS, Singapore, IEEE Spectrum


Key Publications

Total Publications


  • US 14/124,243 (20140174190 A1) (Granted): Manufacturing strain sensitive sensors and/or strain resistant conduits from a metal and carbon matrix.
  • US 13/599,810 (20140065359 A1): Graphene ribbons and methods for their preparation and use.
  • US 14/372,693 (20140379299 A1): A system and a method to detect hydrogen leakage using nano-crystallised palladium gratings.

In international peer-reviewed journals:





  • Metal-organic molecular device for non-volatile memory storage: B. Radha, Abhay A. Sagade and G. U. Kulkarni. Appl. Phys. Lett. 105 (2014) 083103. (Highlighted in ‘Nature Index’) (IF = 3.2)
  • Ultrafast response humidity sensor using supramolecular nanofibre and its application in monitoring breath humidity and flow: U. Mogera#, Abhay A. Sagade#, Subi J. George, and G. U. Kulkarni. Sci. Rep. 4 (2014) 4103. (# Equal contribution). (New: Biomedical Cure and Care)(IF = 4.25)





Before 2009

  • Room temperature electrosynthesis of ZnSe thin films: Y. G. Gudage, N. G. Deshpande, Abhay A. Sagade and Raphal Sharma. J. Alloys and Compounds 488 (2009) 157. (IF = 3.01) [http://doi.org/10.1016/j.jallcom.2008.11.036]
  • Effect of high electronic energy loss of 100 MeV gold heavy ions in copper chalcogenide thin films: Opto-electronic properties study: Ramphal Sharma, Abhay A. Sagade, S. R. Gosavi, Y. G. Gudage, Arindam Ghosh, P. Kulariya, I. Sulaniya, Rajaram S. Mane, Sung-Hwan Han. J. Non-cryst. Solids 355 (2009) 1653. (IF = 2.12) [https://doi.org/10.1016/j.jnoncrysol.2009.05.055]
  • Effect of substrate on performance of copper sulfide thin film ammonia gas sensor: Abhay A. Sagade, Ramphal Sharma and J. C. Vyas. Sens. Lett. 7 (2009) 550. (IF = 1.2) [https://doi.org/10.1166/sl.2009.1108]
  • Modifications of structural, optical and electrical properties of nanocrystalline bismuth sulphide thin films by using swift heavy ions: R. R. Ahire, Abhay A. Sagade, S. D. Chavhan, V. Huse, Y. G. Gudage, F. Singh, D. K. Avasthi, D. M. Phase, Ramphal Sharma. Current Appl. Phys. 9 (2009) 374. (IF = 1.97) [https://doi.org/10.1016/j.cap.2008.03.005]
  • Enhancement in sensitivity of copper sulfide ammonia gas sensor: Effect of SHI irradiation: Abhay A. Sagade*, Ramphal Sharma and Indra Sulania. J. Appl. Phys. 105 (2009) 43705. (IF = 2.2) [corresponding author] [http://dx.doi.org/10.1063/1.3053350]
  • Effect of annealing temperature on ZnO deposited by SILAR: A. Ghosh, N. G. Deshpande, Y. G. Gudage, A. Ghosh, R. Joshi, Abhay A. Sagade, D. M. Phase and Ramphal Sharma. J. Alloys and Compounds 469 (2009) 56. (IF = 3.13) [https://doi.org/10.1016/j.jallcom.2008.02.061]
  • Electrical characterization of 100 MeV gold heavy ion irradiated Cu1.4S/Au Schottky barrier diode: Abhay A. Sagade, N. G. Deshpande, Y. G. Gudage, F. Singh, Ramphal Sharma. Radiation Effects and Defects in Solids 164 (2009) 31. (IF = 0.44) [http://dx.doi.org/10.1080/10420150802164321]
  • Copper sulphide (CuxS) as an ammonia gas sensor working at room temperature: Abhay A. Sagade and Ramphal Sharma. Sens. Actuators B: Chemical 133 (2008) 135. (IF = 5.2) [https://doi.org/10.1016/j.snb.2008.02.015]
  • A comparative study of the physical properties of CdS, Bi2S3 and composite CdS-Bi2S3 thin films for photosensor application: R. R. Ahire, N. G. Deshpande, Y. G. Gudage, Abhay A. Sagade, S. D. Chavhan, D. M. Phase and Ramphal Sharma. Sens. Actuators A: Physical 140 (2007) 207. (IF = 2.49) [https://doi.org/10.1016/j.sna.2007.06.039]
  • Structural damages studies in conducting indium-tin oxide (ITO) thin films induced by Au8+ swift heavy ions (SHI) irradiation: N. G. Deshpande, Abhay A. Sagade,  S. D. Chavhan, J. C. Vyas, F. Singh, A. K. Tripathi, D. K. Avasthi, Ramphal Sharma. Vacuum 82 (2007) 39. (IF = 1.6) [https://doi.org/10.1016/j.vacuum.2007.03.004]
  • Engineering of nanocrystalline cadmium sulphide thin films by using swift heavy ions: R. R. Ahire, Abhay A. Sagade, N. G. Deshapande, S. D. Chavhan, F. Singh and Ramphal Sharma. J. Physics D: Appl. Phys. 40 (2007) 4850. (IF = 2.5) [https://doi.org/10.1088/0022-3727/40/16/014]
  • Photoelectrochemical (PEC) studies on CdSe thin films electrodeposited from non-aqueous bath on different substrates: Y. G. Gudage, N. G. Deshpande, Abhay A. Sagade, R. P. Sharma, S. M. Pawar, C. H. Bhosale Bull. Mater. Sci. 30 (2007) 321. (IF = 0.9) [http://www.ias.ac.in/article/fulltext/boms/030/04/0321-0327]
  • Growth and characterization of CdZn(S1-xSex)2 alloy thin film deposited by solution growth technique: S. D. Chavhan, S. V. Bagul, R. R. Ahire, N. G. Deshpande, A. A. Sagade, Y. G. Gudage, Ramphal Sharma. J. Alloys and Compounds 436 (2007) 442. (IF = 3.12) [https://doi.org/10.1016/j.jallcom.2006.09.126]
  • Growth and characterization of tin disulphide thin films deposited by successive ionic layer adsorption and reaction (SILAR) technique: N. G. Deshpande, A. A. Sagade, Y. G. Gudage, C. D. Lokhande, Ramphal Sharma. J. Alloys and Compounds 436 (2007) 400. (IF = 3.12) [https://doi.org/10.1016/j.jallcom.2006.12.108]
  • Gigantic irradiation effect of 100 MeV Au swift heavy ions on copper sulphide with different chemical compositions: Abhay A. Sagade, N. G. Deshpande, S. D. Chavhan, R. P. Sharma, D. K. Avasthi, F. Singh, A. Tripathi and R. R. Ahire. Radiation Effects and Defects in Solids 162 (2007) 77. (IF = 0.44) [http://dx.doi.org/10.1080/10420150601030525]

In conference proceedings:

  • Chemical composition dependent photoluminescence from nanocrystalline copper sulphide: 52nd DAE-SSPS 2007, Mysore, Karnataka, India.
  • Interaction between light holes and photons in copper sulphide: 53rd DAE-SSPS 2008, Mumbai, India.
  • Evidence of phonon condensers at nanoscale: AIP Proceedings p. 482. ICTOPON 2009, Allahabad, India.
  • Graphene-based MMIC process development and RF passives design: German Microwave Conference 2015, p. 299, Nürnberg, Germany.
  • Experimental demonstration of electro-refractive phase modulators based on graphene: CLEO 2015, p. IM4A.1, Boston, USA.
  • Working towards graphene-based detectors for high sensitivity photodetection: IEEE Photonics Conference 2016, p. 240, Hawaii, USA.
  • Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering: CLEO 2017, p. JTh2A.108, San Jose, California, USA.

- 2017, Odd semester: (Theory) Introduction to Nanoelectronics (NT1202). B. Tech. 4th year; (Laboratory) Physics Lab-I. B. Tech. 1st year.

- 2018, Even semster: (Theory) Micro & Nanofabrication (15NT305). B. Tech. 3rd year.


Opportunities :

We are looking for candidates who share our passion for research and aim successful career in it. Applicants are expected to have preliminary knowledge and, if possible, experimental experience in physics of semiconductors, nanomaterials, fabrication/processing/characterisation or related areas.

1. Postdoc positions -

None at present

2. Ph.D. positions -

The successful candidate is expected to use existing equipments, build new facilities, and develop novel skills in nanostructure synthesis, device farbications, electrical measurements, and scientific publications.


First Class or Equivalent in M.Sc./M.Tech with background in physics, materials science, electrical/electronics/materials engineering or related fields. Those who have appeared for their Master’s degree final examinations and waiting for the results are also eligible to apply.


- SRM Institute of Science and Technology (formerly known as SRM University) Fellowship

- The candidate is also encouraged to obtain funding through National Fellowships: INSPIRE Fellowship, Prime Minister's Fellowship, National Doctoral Fellowship, etc.

- The candidate with self-funding is also welcomed

How to apply:

Applicant should Email to Dr. Sagade containing/attaching: i) A cover letter (strictly less than 2 pages) describing their qualifications, interest in research and their suitability for this group's activities, and ii) Curriculum Vitae.

For more details on University’s admission procedures, please visit ADMISSIONS. Note, next round of admissions will be in April 2018.

3. Project/Research Assistant -

None at present



Contact :

Dr. Abhay A. Sagade
Associate Professor (Research)
SRM Research Institute and Department of Physics
619 University Building (Central Library)
SRM Institute of Science and Technology
SRM nagar, Kattankulathur 603 203
Kanchipuram district, Tamil Nadu, India